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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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供应三极管2SD1047,TO-3PN,有意者请与我公司联系！DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min)·Good Linearity of hFE·High Current Capability·Wide Area of Safe Operation ·Complement to Type 2SB817APPLICATIONS·Recommend for 60W audio frequency amplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
160VVCEOCollector-Emitter Voltage
140VVEBOEmitter-Base Voltage6VICCollector Current-Continuous12AICPCollector Current-Pulse15APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-40~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; RBE=∞140
VV(BR)CBOCollector-BaseBreakdownVoltage
IC= 5mA; IE= 0160
VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 5mA; IC= 06
VVCE(sat)Collector-Emitter Saturation VoltageIC=
5.0A; IB= 0.5A
2.5VVBE(on)Base-Emitter On VoltageIC= 1A ; VCE= 5V
1.5VICBOCollector Cutoff CurrentVCB= 80V ; IE= 0
100μAIEBOEmitter Cutoff CurrentVEB= 4V; IC= 0
100μAhFE-1DC Current GainIC= 1A ; VCE= 5V60 200 hFE-2DC Current GainIC= 6A ; VCE= 5V20
COBOutput CapacitanceIE= 0;VCB= 10V;ftest=
1.0MHz 210 pFfTCurrent-Gain—Bandwidth ProductIC= 1A ; VCE= 5V 15 MHzSwitching timestonTurn-on TimeIC= 1A ,RL= 20Ω,IB1= -IB2= 0.1A,VCC=20V 0.26 μststgStorage Time 6.88 μstfFall Time 0.68 μs u hFE-1ClassificationsDE60-120100-200
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min)·Good Linearity of hFE·High Current Capability·Wide Area of Safe Operation ·Complement to Type 2SB817APPLICATIONS·Recommend for 60W audio frequency amplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
160VVCEOCollector-Emitter Voltage
140VVEBOEmitter-Base Voltage6VICCollector Current-Continuous12AICPCollector Current-Pulse15APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-40~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; RBE=∞140
VV(BR)CBOCollector-BaseBreakdownVoltage
IC= 5mA; IE= 0160
VV(BR)EBOEmitter-BaseBreakdownVoltageIE= 5mA; IC= 06
VVCE(sat)Collector-Emitter Saturation VoltageIC=
5.0A; IB= 0.5A
2.5VVBE(on)Base-Emitter On VoltageIC= 1A ; VCE= 5V
1.5VICBOCollector Cutoff CurrentVCB= 80V ; IE= 0
100μAIEBOEmitter Cutoff CurrentVEB= 4V; IC= 0
100μAhFE-1DC Current GainIC= 1A ; VCE= 5V60 200 hFE-2DC Current GainIC= 6A ; VCE= 5V20
COBOutput CapacitanceIE= 0;VCB= 10V;ftest=
1.0MHz 210 pFfTCurrent-Gain—Bandwidth ProductIC= 1A ; VCE= 5V 15 MHzSwitching timestonTurn-on TimeIC= 1A ,RL= 20Ω,IB1= -IB2= 0.1A,VCC=20V 0.26 μststgStorage Time 6.88 μstfFall Time 0.68 μs u hFE-1ClassificationsDE60-120100-200