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无锡固电半导体股份有限公司
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http://www.iscsemi.com
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产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
供应TIP120三极管,TO-220,有意者请联系！
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@IC=3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 2.0V(Max)@ IC=3A
= 4.0V(Max)@ IC=5A
·Complement to Type TIP125
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 5 | A |
ICM | Collector Current-Peak | 8 | A |
IB | Base Current | 120 | mA |
PC | Collector Power Dissipation TC=25℃ | 65 | W |
Collector Power Dissipation Ta=25℃ | 2 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A, IB= 0 | 60 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 3A ,IB= 12mA |
|
| 2.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation voltage | IC= 5A ,IB= 20mA |
|
| 4.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= 3.0A ; VCE= 3V |
|
| 2.5 | V |
ICBO | Collector Cutoff Current | VCB= 60V, IE= 0 |
|
| 0.2 | mA |
ICEO | Collector Cutoff Current | VCE= 30V, IB= 0 |
|
| 0.5 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 2 | mA |
hFE-1 | DC Current Gain | IC= 0.5A; VCE= 3V | 1000 |
|
|
|
hFE-2 | DC Current Gain | IC= 3.0A; VCE= 3V | 1000 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= 10V, f= 0.1MHz |
|
| 200 | pF |