- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·High Speed Switching
·Good Linearity of hFE
·High Collector Power Dissipation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 80 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 4 | A |
IB | Base Current- Continuous | 1 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 35 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA; IB= 0 | 60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A |
|
| 1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 4A; VCE= 4V |
|
| 2.0 | V |
ICBO | Collector Cutoff Current | VCB= 80V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 4V | 70 |
| 250 |
|
hFE-2 | DC Current Gain | IC= 4A; VCE= 4V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.2A; VCE= 12V; f= 10MHz |
| 80 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | VCC=50V, IC= 4A; IB1= -IB2= 0.4A |
| 0.3 |
| μs |
tstg | Storage Time |
| 1.0 |
| μs | |
tf | Fall Time |
| 0.2 |
| μs | |
u hFE-1Classifications
Q | P |
70-150 | 120-250 |