- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.6V(Max.)@IC= -5A
·Fast Switching Speed
·Complement to Type 2SC3157
APPLICATIONS
·Developed for high-voltage high-speed switching, and is
ideal for use as a driver in devices such as switching reg-
lators, DC/DC converters, and high frequency power am-
plifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -7.0 | V |
IC | Collector Current-Continuous | -10 | A |
ICM | Collector Current-Peak | -20 | A |
IB | Base Current-Continuous | -3.5 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 1.5 | W |
Collector Power Dissipation @ TC=25℃ | 60 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -5.0A; IB= -0.5A, L=1mH | -100 | V | |
VCEX(SUS)-1 | Collector-Emitter Sustaining Voltage | IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped | -100 |
| V |
VCEX(SUS)-2 | Collector-Emitter Sustaining Voltage | IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped | -100 |
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
| -0.6 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
| -10 | μA |
ICER | Collector Cutoff Current | VCE= -100V; RBE= 51Ω,Ta=125℃ |
| -1.0 | mA |
ICEX | Collector Cutoff Current | VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V, Ta=125℃ |
| -10 -1.0 | μA mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
| -10 | μA |
hFE-1 | DC Current Gain | IC= -0.5A; VCE= -5V | 40 | 200 |
|
hFE-2 | DC Current Gain | IC= -3.0A; VCE= -5V | 40 | 200 |
|
hFE-3 | DC Current Gain | IC= -5.0A; VCE= -5V | 20 |
|
|
Switching times | |||||
ton | Turn-on Time | IC= -5.0A, RL= 10Ω, IB1= -IB2= -0.5A, VCC≈-50V |
| 0.5 | μs |
tstg | Storage Time |
| 1.5 | μs | |
tf | Fall Time |
| 0.5 | μs | |
u hFE-2Classifications
M | L | K |
40-80 | 60-120 | 100-200 |
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