无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

300

V

V_CEO

Collector-Emitter Voltage

180

V

V_EBO

Emitter-Base Voltage

10

V

I_C

Collector Current-Continuous

6

A

I_B

Base Current

3

A

P_C

Collector Power Dissipation@T_C=25℃

87.5

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

2.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA; I_B= 0

180

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= 3mA; I_E= 0

300

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2A; I_B= 0.25A

0.6

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 2A; I_B= 0.25A

1.2

V

I_CES

Collector Cutoff Current

V_CE= 250V; V_BE= 0

1.0

mA

I_CEO

Collector Cutoff Current

V_CE= 180V; I_B= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 2A; V_CE= 4V

15

100

f_T

Current Gain-Bandwidth Product

I_C= 0.5A; V_CE= 15V; f=10MHz

10

MHz

Switching Times

t_on

Turn-On Time

I_C= 5A; I_B= 1A

0.5

μs

t_off

Turn-Off Time

I_C= 5A; I_B1= 1A; I_B2= -0.5A

2.0

μs

A

B

C

15-45

30-90

75-100