无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CEV

Collector-Emitter Voltage

550

V

V_CEX

Collector-Emitter Voltage

400

V

V_CEO

Collector-Emitter Voltage

350

V

V_EBO

Emitter-Base Voltage

8.0

V

I_C

Collector Current-Continuous

15

A

I_CM

Collector Current-Peak

20

A

I_B

Base Current-Continuous

5.0

A

P_C

Collector Power Dissipation@T_C=25℃

175

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C=200mA ; I_B=0

350

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 15A; I_B= 3.0A

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 15A; I_B= 3.0A

1.5

V

I_CEV

Collector Cutoff Current

V_CE= Rated V_CEV; V_BE(off)=-1.5V

V_CE= Rated V_CEV; V_BE(off)=-1.5V ; T_C=100℃

0.1

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 8.0V; I_C=0

2.0

mA

h_FE

DC Current Gain

I_C= 15A ; V_CE= 3V

8.0

f_T

Current Gain-Bandwidth Product

I_C= 1.0A ; V_CE= 10V; f_test=5.0MHz

3.0

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f_test=0.1MHz

500

pF

Switching times

t_d

Delay Time

I_C= 15A , V_CC= 200V,I_B1= -I_B2= 3A,

t_p=20μs, Duty Cycle≤2.0%

V_BB=6V, R_L=13.5Ω

0.2

μs

t_r

Rise Time

0.6

μs

t_s

Storage Time

2.5

μs

t_f

Fall Time

0.6

μs