无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CEV

Collector-Emitter Voltage

(V_BE= -1.5V)

450

V

V_CEX

Collector-Emitter Voltage

350

V

V_CEO

Collector-Emitter Voltage

300

V

V_EBO

Emitter-Base Voltage

8

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-Peak

15

A

I_B

Base Current-Continuous

5

A

I_BM

Base Current-peak

7

A

I_E

Emitter Current-Continuous

15

A

I_EM

Emitter Current-peak

22

A

P_C

Collector Power Dissipation

@T_C=25℃

150

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.83

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.2A ; I_B= 0; L= 25mH

300

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 50mA; I_C= 0

8

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 2A

I_C= 10A; I_B= 2A;T_C= 100℃

1.0

2.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 10A; I_B= 2A

I_C= 10A; I_B= 2A;T_C= 100℃

1.5

1.5

V

I_CEV

Collector Cutoff Current

V_CE= 450V; V_BE= -1.5V

V_CE= 450V; V_BE= -1.5V;T_C=125℃

0.1

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 8V; I_C= 0

2.0

mA

h_FE

DC Current Gain

I_C= 10A ; V_CE= 3V

8

35

C_OB

Output Capacitance

I_E= 0; V_CB= 10V, f_test= 1MHz

80

300

pF

Switching times-Resistive Load

t_d

Delay Time

I_C= 10A; I_B1=-I_B2= 2A; V_CC= 300V

R_C= 30Ω; V_BB= -5V, t_p= 30μs

0.1

μs

t_r

Rise Time

0.7

μs

t_s

Storage Time

2.5

μs

t_f

Fall Time

0.5

μs