- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：170490
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3856
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -180 | V |
VCEO | Collector-Emitter Voltage | -180 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -15 | A |
IB | Base Current-Continuous | -4 | A |
PC | Collector Power Dissipation @ TC=25℃ | 130 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -180 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -180V ; IE=0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC=0 |
|
| -100 | μA |
hFE | DC Current Gain | IC= -3A ; VCE= -4V | 50 |
| 180 |
|
COB | Output Capacitance | IE= 0 ; VCB= -10V;f= 1.0MHz |
| 500 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A ; VCE= -12V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC=-40V |
| 0.6 |
| μs |
tstg | Storage Time |
| 0.9 |
| μs | |
tf | Fall Time |
| 0.2 |
| μs | |