无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

80

V

V_CER

Collector-Emitter Voltage R_BE= 100Ω

80

V

V_CEV

Collector-Emitter Voltage V_BE= -1.5V

80

V

V_CEO

Collector-Emitter Voltage

80

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current

8

A

I_CM

Collector Current-peak

15

A

I_B

Base Current

250

mA

P_C

Collector Power Dissipation

@T_C=25℃

65

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.92

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA; I_B= 0

80

V

V_CER(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA;R_BE= 100Ω

80

V

V_CEV(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA;V_BE= -1.5V

80

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 10mA

2.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 8A; I_B= 80mA

3.0

V

V_BE(on)-1

Base-Emitter On Voltage

I_C= 5A; V_CE= 3V

2.8

V

V_BE(on)-2

Base-Emitter On Voltage

I_C= 8A ; V_CE= 3V

4.5

V

I_CEV

Collector Cutoff Current

V_CE= 80V;V_BE= -1.5V

V_CE= 80V;V_BE= -1.5V;T_C= 125℃

0.5

5.0

mA

I_CEO

Collector Cutoff Current

V_CE= 80V; I_B= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

5

mA

h_FE-1

DC Current Gain

I_C= 5A; V_CE= 3V

1000

10000

h_FE-2

DC Current Gain

I_C= 8A ; V_CE= 3V

100

5000

C_OB

Output Capacitance

V_CB= 10V;I_E= 0; f= 1MHz

200

pF