- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min)
·Complement to Type 2SC2824
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5.0 | V |
IC | Collector Current-Continuous | -1 | A |
IB | Base Current-Continuous | -0.1 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 1 | W |
Total Power Dissipation @ TC=25℃ | 15 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -120 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -500mA; IB= -50mA |
|
| -1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -500mA; VCE= -5V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -120V; IE= 0 |
|
| -0.1 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | μA |
hFE | DC Current Gain | IC= -100mA; VCE= -5V | 80 |
| 240 |
|
fT | Current-Gain—Bandwidth Product | IC= -100mA; VCE= -5V | 120 |
| MHz | |
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1.0MHz |
| 30 |
| pF |
u hFEClassifications
O | Y |
80-160 | 120-240 |