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无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)·Good Linearity of hFE·Complement to Type 2SB688
APPLICATIONS·Audio frequency power amplifier applications·Recommend for 45-50W audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
120VVCEOCollector-Emitter Voltage
120VVEBOEmitter-Base Voltage5VICCollector Current-Continuous8AIBBase Current-Continuous0.8APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; IB= 0120
VVCE(sat)Collector-Emitter Saturation VoltageIC=
5.0A; IB= 0.5A
2.5VVBE(on)Base-Emitter On VoltageIC= 5A ; VCE= 5V
1.5VICBOCollector Cutoff CurrentVCB= 120V ; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
10μAhFEDC Current GainIC= 1A ; VCE= 5V55 160 COBOutput CapacitanceIE= 0; VCB= 10V;ftest=
1.0MHz 170 pFfTCurrent-Gain—Bandwidth ProductIC= 1A; VCE= 5V;ftest=
1.0MHz 12 MHz u
hFEClassificationsRO55-11080-160
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)·Good Linearity of hFE·Complement to Type 2SB688
APPLICATIONS·Audio frequency power amplifier applications·Recommend for 45-50W audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
120VVCEOCollector-Emitter Voltage
120VVEBOEmitter-Base Voltage5VICCollector Current-Continuous8AIBBase Current-Continuous0.8APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; IB= 0120
VVCE(sat)Collector-Emitter Saturation VoltageIC=
5.0A; IB= 0.5A
2.5VVBE(on)Base-Emitter On VoltageIC= 5A ; VCE= 5V
1.5VICBOCollector Cutoff CurrentVCB= 120V ; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
10μAhFEDC Current GainIC= 1A ; VCE= 5V55 160 COBOutput CapacitanceIE= 0; VCB= 10V;ftest=
1.0MHz 170 pFfTCurrent-Gain—Bandwidth ProductIC= 1A; VCE= 5V;ftest=
1.0MHz 12 MHz u
hFEClassificationsRO55-11080-160