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无锡固电半导体股份有限公司
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优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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TO-3PL供应2SA1302三极管,有意者请联系！DESCRIPTION
·High Current Capability·High Power Dissipation·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= -200V(Min)·Complement to Type 2SC3281 APPLICATIONS·Power amplifier applications·Recommend for 100W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-200VVCEOCollector-Emitter Voltage
-200VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-15AIBBase Current-Continuous-1.5APCCollector Power Dissipation@ TC=25℃150WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-200
VVCE(sat)Collector-Emitter Saturation VoltageIC= -10A; IB= -1A
-3.0VVBE(on)Base-Emitter On VoltageIC= -8A ; VCE= -5V
-1.5VICBOCollector Cutoff CurrentVCB= -200V ; IE= 0
-5μAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0
-5μAhFE-1DC Current GainIC= -1A ; VCE= -5V55 160 hFE-2DC Current GainIC= -8A ; VCE= -5V35
COBOutput CapacitanceIE= 0;VCB= -10V;ftest=
1.0MHz 470 pFfTCurrent-Gain—Bandwidth ProductIC= -1A ; VCE= -5V 25 MHz
·High Current Capability·High Power Dissipation·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= -200V(Min)·Complement to Type 2SC3281 APPLICATIONS·Power amplifier applications·Recommend for 100W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-200VVCEOCollector-Emitter Voltage
-200VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-15AIBBase Current-Continuous-1.5APCCollector Power Dissipation@ TC=25℃150WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-200
VVCE(sat)Collector-Emitter Saturation VoltageIC= -10A; IB= -1A
-3.0VVBE(on)Base-Emitter On VoltageIC= -8A ; VCE= -5V
-1.5VICBOCollector Cutoff CurrentVCB= -200V ; IE= 0
-5μAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0
-5μAhFE-1DC Current GainIC= -1A ; VCE= -5V55 160 hFE-2DC Current GainIC= -8A ; VCE= -5V35
COBOutput CapacitanceIE= 0;VCB= -10V;ftest=
1.0MHz 470 pFfTCurrent-Gain—Bandwidth ProductIC= -1A ; VCE= -5V 25 MHz