- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：171064
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
您的当前位置：无锡固电半导体股份有限公司 > 元器件产品
询价相关产品
产品信息
供应2SC4382三极管TO-220F,有意者请联系！DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)·DC Current Gain-: hFE=60(Min)@ (VCE= 10V, IC= 0.7A)·Complement to Type 2SA1668
APPLICATIONS·Designed for TV vertical output ,audio output driver andgeneral purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage200VVCEOCollector-Emitter Voltage200VVEBOEmitter-Base Voltage6VICCollector Current-Continuous 2AIBBase Current-Continuous
1APCCollector Power Dissipation@TC=25℃25WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA ; IB= 0200
VVCE(sat)Collector-Emitter Saturation VoltageIC= 0.7A; IB= 0.07A
1.0VICBOCollector Cutoff CurrentVCB= 200V ; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 6V; IC= 0
10μAhFEDC Current GainIC= 0.7A ; VCE= 10V60
COBOutput CapacitanceIE= 0; VCB= 10V; f= 1MHz 35 pFfTCurrent-Gain—Bandwidth ProductIE= -0.2A ; VCE= 12V 15 MHzSwitching TimestonTurn-On TimeIC= 1A; IB1= -IB2= 0.1A;VCC= 20V; RL= 20Ω 1.0 μststgStorage Time 3.0 μstfFall Time 1.5 μs
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)·DC Current Gain-: hFE=60(Min)@ (VCE= 10V, IC= 0.7A)·Complement to Type 2SA1668
APPLICATIONS·Designed for TV vertical output ,audio output driver andgeneral purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage200VVCEOCollector-Emitter Voltage200VVEBOEmitter-Base Voltage6VICCollector Current-Continuous 2AIBBase Current-Continuous
1APCCollector Power Dissipation@TC=25℃25WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA ; IB= 0200
VVCE(sat)Collector-Emitter Saturation VoltageIC= 0.7A; IB= 0.07A
1.0VICBOCollector Cutoff CurrentVCB= 200V ; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 6V; IC= 0
10μAhFEDC Current GainIC= 0.7A ; VCE= 10V60
COBOutput CapacitanceIE= 0; VCB= 10V; f= 1MHz 35 pFfTCurrent-Gain—Bandwidth ProductIE= -0.2A ; VCE= 12V 15 MHzSwitching TimestonTurn-On TimeIC= 1A; IB1= -IB2= 0.1A;VCC= 20V; RL= 20Ω 1.0 μststgStorage Time 3.0 μstfFall Time 1.5 μs