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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
供应MJ15025三极管,TO-3,有意者请联系.DESCRIPTION
·Complement to Type MJ15022/15024·Excellent Safe Operating Area·High DC current Gain: hFE= 5 (Min)@ IC= -8 A APPLICATIONS·Designed for high power audio, disk head positionersand other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageMJ15023-350VMJ15025-400VCEOCollector-Emitter VoltageMJ15023-200VMJ15025-250VEBOEmitter-Base Voltage-5VICCollector Current-Continuous-16AICMCollector Current-Peak -30AIBBase Current-Continuous-5APDTotal Power Dissipation @TC=25℃250WTjJunction Temperature150℃TstgStorage Temperature-65~200℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageMJ15023IC= -0.1A ;IB= 0-200 VMJ15025-250VCE(sat)-1Collector-Emitter Saturation VoltageIC= -8A; IB= -0.8A -1.4VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -16A; IB= -3.2A -4.0VVBE(on)Base-Emitter On VoltageIC= -8A ; VCE= -4V -2.2VICEOCollectorCutoff CurrentMJ15023VCE= -150V; IB= 0 -0.5mAMJ15025VCE= -200V; IB= 0ICEXCollectorCutoff CurrentMJ15023VCE= -200V; VBE(OFF)= -1.5V -0.25mAMJ15025VCE= -250V; VBE(OFF)= -1.5VIEBOEmitter Cutoff CurrentVEB= -5V; IC=0 -0.5mAhFE-1DC Current GainIC= -8A ; VCE= -4V1560 hFE-2DC Current GainIC= -16A ; VCE= -4V5
Is/bSecond Breakdown CollectorCurrent With Base Forward BiasedVCE= -50Vdc,t=0.5 s,VCE= -80Vdc,t=0.5 s,Nonrepetitive-5.0-2.0 ACOBOutput CapacitanceIE= 0 ; VCB= 10V; ftest=
1.0MHz 600pFfTCurrent-Gain—Bandwidth ProductIC= -1A ; VCE= -10V; ftest=
1.0MHz4 MHz
·Complement to Type MJ15022/15024·Excellent Safe Operating Area·High DC current Gain: hFE= 5 (Min)@ IC= -8 A APPLICATIONS·Designed for high power audio, disk head positionersand other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageMJ15023-350VMJ15025-400VCEOCollector-Emitter VoltageMJ15023-200VMJ15025-250VEBOEmitter-Base Voltage-5VICCollector Current-Continuous-16AICMCollector Current-Peak -30AIBBase Current-Continuous-5APDTotal Power Dissipation @TC=25℃250WTjJunction Temperature150℃TstgStorage Temperature-65~200℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageMJ15023IC= -0.1A ;IB= 0-200 VMJ15025-250VCE(sat)-1Collector-Emitter Saturation VoltageIC= -8A; IB= -0.8A -1.4VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -16A; IB= -3.2A -4.0VVBE(on)Base-Emitter On VoltageIC= -8A ; VCE= -4V -2.2VICEOCollectorCutoff CurrentMJ15023VCE= -150V; IB= 0 -0.5mAMJ15025VCE= -200V; IB= 0ICEXCollectorCutoff CurrentMJ15023VCE= -200V; VBE(OFF)= -1.5V -0.25mAMJ15025VCE= -250V; VBE(OFF)= -1.5VIEBOEmitter Cutoff CurrentVEB= -5V; IC=0 -0.5mAhFE-1DC Current GainIC= -8A ; VCE= -4V1560 hFE-2DC Current GainIC= -16A ; VCE= -4V5
Is/bSecond Breakdown CollectorCurrent With Base Forward BiasedVCE= -50Vdc,t=0.5 s,VCE= -80Vdc,t=0.5 s,Nonrepetitive-5.0-2.0 ACOBOutput CapacitanceIE= 0 ; VCB= 10V; ftest=
1.0MHz 600pFfTCurrent-Gain—Bandwidth ProductIC= -1A ; VCE= -10V; ftest=
1.0MHz4 MHz