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无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
DESCRIPTION
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min)·Good Linearity of hFE·Complement to Type 2SC3856
APPLICATIONS·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-180VVCEOCollector-Emitter Voltage
-180VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous-15AIBBase Current-Continuous-4APCCollector Power Dissipation@ TC=25℃130WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-180
VVCE(sat)Collector-Emitter Saturation VoltageIC= -5.0A; IB= -0.5A
-2.0VICBOCollector Cutoff CurrentVCB= -180V ; IE=0
-100μAIEBOEmitter Cutoff CurrentVEB= -6V; IC=0
-100μAhFEDC Current GainIC= -3A ; VCE= -4V50 180 COBOutput CapacitanceIE= 0 ; VCB= -10V;f=
1.0MHz 500 pFfTCurrent-Gain—Bandwidth ProductIE= 0.5A ; VCE= -12V 20 MHzSwitching timestonTurn-on TimeIC= -10A ,RL= 4Ω,IB1= -IB2= -1A,VCC=-40V 0.6 μststgStorage Time 0.9 μstfFall Time 0.2 μs
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min)·Good Linearity of hFE·Complement to Type 2SC3856
APPLICATIONS·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-180VVCEOCollector-Emitter Voltage
-180VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous-15AIBBase Current-Continuous-4APCCollector Power Dissipation@ TC=25℃130WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-180
VVCE(sat)Collector-Emitter Saturation VoltageIC= -5.0A; IB= -0.5A
-2.0VICBOCollector Cutoff CurrentVCB= -180V ; IE=0
-100μAIEBOEmitter Cutoff CurrentVEB= -6V; IC=0
-100μAhFEDC Current GainIC= -3A ; VCE= -4V50 180 COBOutput CapacitanceIE= 0 ; VCB= -10V;f=
1.0MHz 500 pFfTCurrent-Gain—Bandwidth ProductIE= 0.5A ; VCE= -12V 20 MHzSwitching timestonTurn-on TimeIC= -10A ,RL= 4Ω,IB1= -IB2= -1A,VCC=-40V 0.6 μststgStorage Time 0.9 μstfFall Time 0.2 μs