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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
MT-100供应2SA1186三极管,有意者请联系！DESCRIPTION
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min)·Good Linearity of hFE·Complement to Type 2SC2837
APPLICATIONS·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-150VVCEOCollector-Emitter Voltage
-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AIBBase Current-Continuous-2APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA ; IB= 0-150
VVCE(sat)Collector-Emitter Saturation VoltageIC= -5.0A; IB= -0.5A
-2.0VICBOCollector Cutoff CurrentVCB= -150V ; IE=0
-100μAIEBOEmitter Cutoff CurrentVEB= -5V; IC=0
-100μAhFEDC Current GainIC= -3A ; VCE= -4V50 180 COBOutput CapacitanceIE= 0 ; VCB= -80V;f=
1.0MHz 110 pFfTCurrent-Gain—Bandwidth ProductIE= 1A ; VCE= -12V 60 MHzSwitching timestonTurn-on TimeIC= -5A ,RL= 12Ω,IB1= -IB2= -0.5A,VCC=-60V 0.25 μststgStorage Time 0.8 μstfFall Time 0.2 μs u
hFEClassificationsO:50-80O50O60O7-80P:80-130P80P90P100P110P1200-110Y:130-180Y130Y140Y150Y160Y170170-180
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min)·Good Linearity of hFE·Complement to Type 2SC2837
APPLICATIONS·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-150VVCEOCollector-Emitter Voltage
-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AIBBase Current-Continuous-2APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA ; IB= 0-150
VVCE(sat)Collector-Emitter Saturation VoltageIC= -5.0A; IB= -0.5A
-2.0VICBOCollector Cutoff CurrentVCB= -150V ; IE=0
-100μAIEBOEmitter Cutoff CurrentVEB= -5V; IC=0
-100μAhFEDC Current GainIC= -3A ; VCE= -4V50 180 COBOutput CapacitanceIE= 0 ; VCB= -80V;f=
1.0MHz 110 pFfTCurrent-Gain—Bandwidth ProductIE= 1A ; VCE= -12V 60 MHzSwitching timestonTurn-on TimeIC= -5A ,RL= 12Ω,IB1= -IB2= -0.5A,VCC=-60V 0.25 μststgStorage Time 0.8 μstfFall Time 0.2 μs u
hFEClassificationsO:50-80O50O60O7-80P:80-130P80P90P100P110P1200-110Y:130-180Y130Y140Y150Y160Y170170-180