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无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
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- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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DESCRIPTION
·Low Collector Saturation Voltage- : VCE(sat)=-
2.0V(Min) @IC=- 7A·Good Linearity of hFE·Complement to Type 2SC5198 APPLICATIONS·Power amplifier applications·Recommend for 70W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-140VVCEOCollector-Emitter Voltage
-140VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AIBBase Current-Continuous-1APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-140
VVCE(sat)Collector-Emitter Saturation VoltageIC= -7.0A; IB= -0.7A
-2.0VVBE(on)Base-Emitter On VoltageIC= -5A ; VCE= -5V
-1.5VICBOCollector Cutoff CurrentVCB= -140V ; IE=0
-5μAIEBOEmitter Cutoff CurrentVEB= -5V; IC=0
-5μAhFE-1DC Current GainIC= -1A ; VCE= -5V55 160 hFE-2DC Current GainIC= -5A ; VCE= -5V35
COBOutput CapacitanceIE=0 ; VCB= -10V;ftest=
1.0MHz 320 pFfTCurrent-Gain—Bandwidth ProductIC=-1A ; VCE= -5V 30 MHz u
hFE-1ClassificationsR55R65R75R8555-6565-7575-8585-95 O95O105O115O125O135O145O-160
·Low Collector Saturation Voltage- : VCE(sat)=-
2.0V(Min) @IC=- 7A·Good Linearity of hFE·Complement to Type 2SC5198 APPLICATIONS·Power amplifier applications·Recommend for 70W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
-140VVCEOCollector-Emitter Voltage
-140VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-10AIBBase Current-Continuous-1APCCollector Power Dissipation@ TC=25℃100WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ; IB= 0-140
VVCE(sat)Collector-Emitter Saturation VoltageIC= -7.0A; IB= -0.7A
-2.0VVBE(on)Base-Emitter On VoltageIC= -5A ; VCE= -5V
-1.5VICBOCollector Cutoff CurrentVCB= -140V ; IE=0
-5μAIEBOEmitter Cutoff CurrentVEB= -5V; IC=0
-5μAhFE-1DC Current GainIC= -1A ; VCE= -5V55 160 hFE-2DC Current GainIC= -5A ; VCE= -5V35
COBOutput CapacitanceIE=0 ; VCB= -10V;ftest=
1.0MHz 320 pFfTCurrent-Gain—Bandwidth ProductIC=-1A ; VCE= -5V 30 MHz u
hFE-1ClassificationsR55R65R75R8555-6565-7575-8585-95 O95O105O115O125O135O145O-160